This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ATF-36163-TR1G +BOM

Featuring a trifilar configuration for improved isolation and stability, these high-frequency GaAs transistors perform well up to 15 GHz

Manufacturer:

Broadcom
Mfr.Part #:

ATF-36163-TR1G
Datasheet:

ATF-36163-TR1G Datasheet (PDF)
Transistor Type:

pHEMT
Technology:

GaAs
Operating Frequency:

12 GHz
Gain:

10 dB
EDA/CAD Models:

Request Free CAD Models for ATF-36163-TR1G

ATF-36163-TR1G Information

Avaq Semiconductor offers the highly versatile and reliable ATF-36163-TR1G driver, produced by Broadcom. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the ATF-36163-TR1G.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	RF JFET Transistors	Transistor Type	pHEMT
Technology	GaAs	Operating Frequency	12 GHz
Gain	10 dB	Vds - Drain-Source Breakdown Voltage	3 V
Vgs - Gate-Source Breakdown Voltage	- 3 V	Id - Continuous Drain Current	40 mA
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	180 mW
Mounting Style	SMD/SMT	Configuration	Single Quad Source
Forward Transconductance - Min	60 mS	NF - Noise Figure	12 dB
P1dB - Compression Point	5 dBm	Product	RF JFET Transistors
Product Type	RF JFET Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Type	GaAs pHEMT
Unit Weight	0.000212 oz	Package/Case	TSSOP-6