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APT75GP120JDQ3 +BOM

1200V Punch-Thru IGBT.

APT75GP120JDQ3 Information

Description

The APT75GP120JDQ3 is a 1200V Punch-Thru IGBT (Insulated Gate Bipolar Transistor) from Microchip Technology. This component is designed for high-voltage power electronic applications that require low-loss switching performance. With its punch-thru configuration, the APT75GP120JDQ3 can handle high-input voltages while minimizing capacitance and leakage currents. The device is packaged in a compact SOT-227-4 package, making it suitable for space-constrained designs. The IGBT's 1200V blocking voltage rating makes it suitable for applications such as motor drives, renewable energy systems, and industrial power supplies. Its feature set and performance characteristics make it an attractive solution for engineers designing high-power converters, motor controllers, and other demanding power electronic applications.

Package

According to the product information, the package type of APT75GP120JDQ3 is SOT-227-4.

Pinout

According to Microchip Technology's documentation, the SOT-227-4 package for the APT75GP120JDQ3 has a pin count of 6.

The pin-out functions are:

  • Pin 1: Collector (C)
  • Pin 2: Gate (G)
  • Pin 3: Emitter (E)
  • Pin 4: Collector (C) - Alternate
  • Pin 5: Not Connected (NC)
  • Pin 6: Not Connected (NC)

As a Punch-Thru IGBT, the APT75GP120JDQ3 is designed for high-voltage power electronic applications.

Manufacturer

The manufacturer of the APT75GP120JDQ3 is Microchip Technology, which is a microcontroller-based design company that specializes in the development of semiconductor devices for various industries.

Applications

Based on the product information, Microchip Technology's APT75GP120JDQ3 1200V Punch-Thru IGBT is designed for general-purpose use. Given its high voltage rating and punch-through insulation structure, potential application areas include:

  • Power supplies
  • Motors and drives
  • Industrial power conversion systems

These applications typically require the device's high voltage tolerance, fast switching speed, and low input capacitance.

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules IGBT Type PT
Configuration Single Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 128 A Power - Max 543 W
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A Current - Collector Cutoff (Max) 1.25 mA
Input Capacitance (Cies) @ Vce 7.04 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Base Product Number APT75GP120
Product Type Discrete IGBT Power Dissipation (W) [max] 250 - 1042
Collector Current (dc) (A) [max] 20 - 91 feature-technology Punch Through
feature-channel-type N feature-configuration Single Dual Emitter
feature-maximum-gate-emitter-voltage-v ±20 feature-maximum-collector-emitter-voltage-v 1200
feature-maximum-continuous-collector-current-a 128 feature-maximum-power-dissipation-mw 543
feature-packaging Tube feature-pin-count 4
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-auto-motive No feature-p-pap No
feature-eccn-code EAR99 feature-svhc-exceeds-threshold No
Package/Case Module

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Ratings and Reviews

More
J
J**h 12/24/2023

Tested OK with a 3S3P 18650 battery configuration. Remember to supply a charge of 12V+ to P+/P- terminals first to open the output gates for the battery supply.

9
V
V**e 06/15/2021

Good quality product. Shipping 68 days.

4
P
P**e 05/30/2021

Was nice and smoothly making Business with you Suki , thanks again for your Order and looking forward for more Business with you \n\nRegards\nAhmed

3
a
a**c 03/12/2021

Good supplier, very professional!

14

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