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1200V Punch-Thru IGBT.
ModuleManufacturer:
Mfr.Part #:
APT75GP120JDQ3
Datasheet:
IGBT Type:
PT
Configuration:
Single
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
128 A
EDA/CAD Models:
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The APT75GP120JDQ3 is a 1200V Punch-Thru IGBT (Insulated Gate Bipolar Transistor) from Microchip Technology. This component is designed for high-voltage power electronic applications that require low-loss switching performance. With its punch-thru configuration, the APT75GP120JDQ3 can handle high-input voltages while minimizing capacitance and leakage currents. The device is packaged in a compact SOT-227-4 package, making it suitable for space-constrained designs. The IGBT's 1200V blocking voltage rating makes it suitable for applications such as motor drives, renewable energy systems, and industrial power supplies. Its feature set and performance characteristics make it an attractive solution for engineers designing high-power converters, motor controllers, and other demanding power electronic applications.
According to the product information, the package type of APT75GP120JDQ3 is SOT-227-4.
According to Microchip Technology's documentation, the SOT-227-4 package for the APT75GP120JDQ3 has a pin count of 6.
The pin-out functions are:
As a Punch-Thru IGBT, the APT75GP120JDQ3 is designed for high-voltage power electronic applications.
The manufacturer of the APT75GP120JDQ3 is Microchip Technology, which is a microcontroller-based design company that specializes in the development of semiconductor devices for various industries.
Based on the product information, Microchip Technology's APT75GP120JDQ3 1200V Punch-Thru IGBT is designed for general-purpose use. Given its high voltage rating and punch-through insulation structure, potential application areas include:
These applications typically require the device's high voltage tolerance, fast switching speed, and low input capacitance.
Category | Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules | IGBT Type | PT |
Configuration | Single | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 128 A | Power - Max | 543 W |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A | Current - Collector Cutoff (Max) | 1.25 mA |
Input Capacitance (Cies) @ Vce | 7.04 nF @ 25 V | Input | Standard |
NTC Thermistor | No | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Base Product Number | APT75GP120 |
Product Type | Discrete IGBT | Power Dissipation (W) [max] | 250 - 1042 |
Collector Current (dc) (A) [max] | 20 - 91 | feature-technology | Punch Through |
feature-channel-type | N | feature-configuration | Single Dual Emitter |
feature-maximum-gate-emitter-voltage-v | ±20 | feature-maximum-collector-emitter-voltage-v | 1200 |
feature-maximum-continuous-collector-current-a | 128 | feature-maximum-power-dissipation-mw | 543 |
feature-packaging | Tube | feature-pin-count | 4 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc-exceeds-threshold | No |
Package/Case | Module |
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Tested OK with a 3S3P 18650 battery configuration. Remember to supply a charge of 12V+ to P+/P- terminals first to open the output gates for the battery supply.