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APT150GN120JDQ4

In Stock: 7,298

IGBT Module Trench Field Stop Single 1200 V 215 A 625 W Chassis Mount ISOTOP®

Manufacturers:
Microchip Technology, Inc
Mfr.Part#:
APT150GN120JDQ4
Datasheet:
APT150GN120JDQ4 Datasheet (PDF)
Package/Case:
Module
Product Type:
IGBT Modules
RoHS:
Lifecycle:
Active
EDA/CAD Models:
Request Free CAD Models for APT150GN120JDQ4

APT150GN120JDQ4 Information

Description

The APT150GN120JDQ4 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high voltage and current applications. It features a trench field-stop structure, providing improved performance, efficiency, and thermal management. Built on Microchip Technology's expertise, this ISOTOP®-mounted IGBT is suitable for demanding industrial sectors like energy grid, traction systems, or power electronics. In summary, the APT150GN120JDQ4 is a high-performance IGBT module designed for demanding applications in the industrial sector.

Features

The APT150GN120JDQ4 IGBT module features a high voltage rating of 1200 V, a maximum current of 215 A, and a power capability of 625 W. It is designed for chassis mount applications and utilizes the ISOTOP® package, specifically SOT227-
Key features also include trench field stop technology and advanced thermal management.

Package

The package type of APT150GN120JDQ4 is SOT227-
This indicates a small surface-mount transistor package.

Pinout

The APT150GN120JDQ4 IGBT module has a Package type of SOT227-
This package typically contains four pins. Without detailed documentation, it's challenging to list the exact functions of each pin. However, in general, these pins may be:
Drain (D): Output current path.
Gate (G): Controls the flow of current through the drain.
Source (S): Unused or connected to the module's common ground.
Optional: Additional pins for temperature sensing or protection circuitry. For precise pin count, function, and specifications, consult the manufacturer's datasheet or product manual.

Manufacturer

The manufacturer of the APT150GN120JDQ4 IGBT module is Microchip Technology. Microchip is a semiconductor company known for developing integrated circuits, microcontrollers, and other electronic components. In summary, Microchip is a technology-focused firm in the electronics industry.

Applications

The APT150GN120JDQ4 IGBT module is designed for high voltage, current (up to 215A), and power applications (625W). Common areas of application include motor control, energy conversion systems, and power electronics in general.

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	IGBT Type	Trench Field Stop
Configuration	Single	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	215 A	Power - Max	625 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 150A	Current - Collector Cutoff (Max)	300 µA
Input Capacitance (Cies) @ Vce	9.5 nF @ 25 V	Input	Standard
NTC Thermistor	No	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Base Product Number	APT150
Product Type	Discrete IGBT	Power Dissipation (W) [max]	195 - 960
Collector Current (dc) (A) [max]	22 - 100	Package/Case	Module

APT150GN120JDQ4 FAQs

1.Q: What is the gate-emitter leakage current for the Microsemi 1200V IGBT module?

A: The gate-emitter leakage current is typically 600nA under normal operating conditions.

2.Q: What are related parts to the Microchip ISOTOP 1200V/150A IGBT module?

A: Similar modules include Microsemi’s 1700V/100A IGBTs and higher-current ISOTOP variants for diverse voltage/current needs.

3.Q: Does the Microsemi 1200V IGBT module comply with industry certifications?

A: It meets RoHS and REACH standards. Confirm specific certifications (e.g., UL, IEC) via the manufacturer’s datasheet.

4.Q: What are the recommended operating conditions for this IGBT module?

A: Operate between -55°C to +150°C, use gate-emitter voltage within ±20V (max ±30V), and ensure proper heatsinking.

5.Q: What is the maximum power dissipation of the Microsemi 1200V 150A IGBT module?

A: The maximum power dissipation is 625W, requiring robust thermal management for safe operation.

6.Q: What is the collector-emitter saturation voltage of the Microchip ISOTOP 1200V IGBT module?

A: The typical collector-emitter saturation voltage (VCE(sat)) is 1.7V under rated conditions.

7.Q: What are the absolute maximum ratings for the Microsemi 1200V 150A IGBT module?

A: Absolute maximums include 1200V VCEO, 215A collector current (25°C), ±30V gate-emitter voltage, and 150°C maximum junction temperature.

8.Q: What package does the Microchip ISOTOP 1200V/150A IGBT module use?

A: It uses the SOT-227-4 (miniBLOC) package with dimensions 38.2mm x 25.4mm x 9.6mm for chassis mounting.

9.Q: What are typical applications for the Microsemi 1200V 150A IGBT Fieldstop Low Frequency Combi module?

A: It is used in industrial motor drives, UPS systems, welding equipment, and high-power/low-frequency switching applications.

10.Q: What are the key features of the Microchip ISOTOP IGBT Silicon Module (1200V, 150A, SOT-227-4)?

A: Key features include 1200V collector-emitter voltage, 150A continuous current (215A at 25°C), 1.7V saturation voltage, chassis-mount SOT-227-4 package, and an operating temperature range of -55°C to +150°C.

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Ratings and Reviews

B

B**O
07/04/2025

18

Redone the charger for the screwdriver with this board. Works fine (exposed 1,4 amps)
B

B**O
06/27/2024

18

I recommend. Shurik beast.
D

D**n
03/28/2024

17

Lowdown lowers)) thanks))
S

S**n
02/06/2023

13

I am highly impressed with the quality of the electronic components that Avaq sold me. They were original and precisely matched the description provided on the website.

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