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Airfast RF Power LDMOS Transistor, 728-3600 MHz, 1.26 W Avg., 28 V
PLD-1.5WManufacturer:
Mfr.Part #:
AFT27S010NT1
Datasheet:
Series: AFT27S010N
F<sub>i(RF)</sub> [max] (MHz):
3600
Number Of Pins:
4
Amp Class:
AB
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The NXP AFT27S010NT1 is a RF MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-frequency applications. It operates at a voltage of up to 28V, with a current rating of 90mA and a frequency range of 728MHz to 3.6GHz. This device features a power dissipation of 1.5W (PLD) and has a gain of 21.7dB. The AFT27S010NT1 is packaged in a PLD-1.5W package, making it suitable for use in various RF applications such as amplifiers, switches, and attenuators. The introduction to the AFT27S010NT1 highlights its high-frequency performance, power handling capabilities, and compact packaging, making it an attractive option for designers of RF systems.
Based on the provided information, here are the features of the AFT27S010NT1:
Please note that the provided information does not mention any specific features of this component, such as its use in a particular application, its performance characteristics, or its compatibility with other components.
The package type of AFT27S010NT1 is PLD-1.5W, as specified in the product information.
Based on NXP's documentation, the AFT27S010NT1 is a RF MOSFET with the following characteristics:
Please note that this information is based on my training data and may not be exhaustive or up-to-date. For the most accurate and detailed information, I recommend consulting NXP's official documentation or contacting their support team directly.
The manufacturer of the AFT27S010NT1 is NXP USA Inc., which is a semiconductor company that designs, manufactures, and markets microcontrollers, processors, and other electronic components for various industries such as automotive, industrial, medical, and consumer electronics.
Based on the product information, the application area for AFT27S010NT1 is not explicitly mentioned. However, considering it's a RF Mosfet with a frequency range of 728MHz to 3.6GHz, likely applications include:
The specific application areas depend on the user's design requirements and constraints.
Based on the product information, I would recommend the following equivalent products:
Please note that this is not an exhaustive list and actual equivalents may vary depending on specific application requirements.
f<sub>i(RF)</sub> [max] (MHz) | 3600 | Number of pins | 4 |
Amp Class | AB | Test Signal | WCDMA |
Supply Voltage (Typ) (V) | 28 | Class | AB |
Die Technology | LDMOS | Thermal Resistance (Spec) (℃/W) | 3.5 |
P1dB (Typ) (dBm) | 40 | Security Status | COMPANY PUBLIC |
Frequency (Min-Max) (MHz) | 100,3600 | Efficiency (Typ) (%) | 22.6 |
Frequency Band (Hz) | 100000000,3600000000 | Description | Airfast RF Power LDMOS Transistor, 728-3600 MHz, 1.26 W Avg., 28 V |
f<sub>i(RF)</sub> [min] (MHz) | 100 | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | 1.26 @ AVG |
P1dB (Typ) (W) | 10 | Gain (Typ) (dB) | 21.7 |
Power Gain (Typ) (dB) @ f (MHz) | 21.7 @ 2170 | Frequency (Max) (MHz) | 3600 |
Frequency (Min) (MHz) | 100 | Frequency (Min-Max) (GHz) | 0.1 to 3.6000001 |
f<sub>range</sub> [max] (MHz) | 3600 | f<sub>range</sub> [min] (MHz) | 100 |
Rth(j-a) (K/W) | 3.5 | Matching | unmatched |
Modes of Operation | wideband code division multiple access | Package/Case | PLD-1.5W |
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