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AFT05MS031NR1 +BOM

AFT05MSx Series 40 V 520 MHz N-Channel RF Power LDMOS Transistor - TO-270-2

AFT05MS031NR1 Information

Description

The NXP AFT05MS031NR1 is a gallium nitride on silicon carbide RF power amplifier module, packaged in a TO-270-2 format. This component is designed for various applications such as consumer electronics, industrial automation, power supplies, telecommunications, lighting, and medical devices. It features innovative technology and premium quality, ensuring durable performance every time. The AFT05MS031NR1 is part of NXP's sustainable energy solution, providing reliable power for your home or business. With its user-friendly installation process, this module is an excellent choice for those seeking a high-performance RF amplifier.

Features

According to the product information, the features of AFT05MS031NR1 are:

  • Sustainable Energy Solution
  • Reliable Power for Your Home
  • Innovative Technology Inside
  • Premium Quality Guaranteed
  • Durable Performance Every Time
  • User-Friendly Installation Process

Package

According to the product information, the package type of AFT05MS031NR1 chip is TO-270-2.

Manufacturer

The manufacturer of the AFT05MS031NR1 chip is NXP, a leading semiconductor company that specializes in designing and manufacturing microcontrollers, processors, and other electronic components for various industries, including consumer electronics, industrial automation, power supplies, telecommunications, lighting, and medical devices.

Applications

According to the product information, the application areas of AFT05MS031NR1 are:

  • Consumer electronics
  • Industrial automation
  • Power supplies
  • Telecommunications
  • Lighting
  • Medical devices

Specifications

f<sub>i(RF)</sub> [max] (MHz) 520 Number of pins 2
Amp Class AB Test Signal 1-TONE
Supply Voltage (Typ) (V) 13.6 Class AB
Die Technology LDMOS Thermal Resistance (Spec) (&#8451;/W) 0.67
P1dB (Typ) (dBm) 44.9 Security Status COMPANY PUBLIC
Frequency (Min-Max) (MHz) 1.8,520 Efficiency (Typ) (%) 71
Frequency Band (Hz) 1800000,520000000 Description Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
f<sub>i(RF)</sub> [min] (MHz) 1.8 Output Power (Typ) (W) @ Intermodulation Level at Test Signal 31 @ 1-Tone
P1dB (Typ) (W) 31 Gain (Typ) (dB) 17.7
Power Gain (Typ) (dB) @ f (MHz) 17.7 @ 520 Frequency (Max) (MHz) 520
Frequency (Min) (MHz) 1.8 Frequency (Min-Max) (GHz) 0.0018000001 to 0.52000004
f<sub>range</sub> [max] (MHz) 520 f<sub>range</sub> [min] (MHz) 1.8
Rth(j-a) (K/W) 0.67 Matching unmatched
Modes of Operation single-tone modulation Package/Case TO-270

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Returns and exchanges are supported, provided the items remain in their original condition.

Ratings and Reviews

More
Z
Z**e 09/23/2023

Very good. All right. Recommend.

14
B
B**s 06/10/2023

Order from eight products, all products are quality, execution is fast.

11
L
L**n 10/21/2021

Everything is in place. Pretty fast shipping.

4
J
J**e 04/18/2021

Arrived in ukkraina for 19 days. thank you to the seller. i recommend.

6

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AFT05MS031NR1 Datasheet PDF

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