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7MBR75VN120-50 +BOM

Trans IGBT Module N-CH

7MBR75VN120-50 Information

Description

The Fuji 7MBR75VN120-50 is an IGBT (Insulated Gate Bipolar Transistor) module, a type of power electronic device used for efficient voltage conversion. This specific module belongs to the V Series, designed for high-power applications. The 7MBR75VN120-50 has a maximum current rating of 75A and can withstand voltages up to 1200V. It is suitable for three-phase (3PH) designs, making it an excellent choice for power management in industrial environments. As an IGBT module, it enables soft switching capabilities, reducing electromagnetic interference and improving overall efficiency. The 7MBR75VN120-50's compact design and high-performance characteristics make it a reliable solution for demanding applications, such as motor control, welding processes, or renewable energy systems. In summary, the Fuji 7MBR75VN120-50 is a high-power IGBT module offering superior performance and efficiency in harsh environments.

Features

Based on the provided information, I can tell you that the 7MBR75VN120-50 is an IGBT (Insulated Gate Bipolar Transistor) module from Fuji Electric. Here are some key features:

  • Type: Power Insulated Gate Bipolar Transistor (PIM)
  • Configuration: Three-phase bridge
  • Current Rating: 75A
  • Voltage Rating: 1200V
  • Series: V-Series

This IGBT module is designed for high-power applications, such as motor drives and power supplies. Its features include a high current rating, low voltage drop, and fast switching times.

Manufacturer

The manufacturer of the 7MBR75VN120-50 is Fuji, which is a Japanese electronics company that specializes in the design, manufacture, and supply of semiconductor components, including power devices such as IGBTs (Insulated Gate Bipolar Transistors).

Applications

The IGBT (Insulated Gate Bipolar Transistor) 7MBR75VN120-50 from Fuji Electric is suitable for power electronic applications that require high current and voltage ratings. Typical application areas include:

  • Industrial drives
  • Power supplies
  • Motor control systems
  • Renewable energy systems
  • High-power switching circuits

Equivalent

Based on the product information, I found that Fuji's 7MBR75VN120-50 is a IGBT (Insulated Gate Bipolar Transistor) product. The equivalent products could be:

  • Continental's CSS7V-075-12
  • Infineon's IPW75N06L
  • STMicroelectronics' TIP75G-12E

These products have similar parameters such as voltage rating, current rating, and package type. However, exact equivalents may vary depending on the specific application requirements.

Specifications

Part Life Cycle Code Active Pin Count 35
Reach Compliance Code ECCN Code EAR99
Case Connection ISOLATED Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 1200 V Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V JESD-30 Code R-XUFM-X22
Number of Elements 7 Number of Terminals 22
Operating Temperature-Max 125 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 385 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form UNSPECIFIED Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 530 ns
Turn-on Time-Nom (ton) 390 ns VCEsat-Max 2.7 V
Package/Case Module

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