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2SK2610 +BOM
High-power MOSFET transistor for demanding application
TO-3PN-3-
Manufacturer:
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Mfr.Part #:
2SK2610
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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2SK2610 Information
Description
The Toshiba 2SK2610 is a power MOSFET transistor, specifically an N-channel device with a high voltage rating of 900V and current rating of 5A. It has a low resistance of 2.5 ohms, making it suitable for general-purpose power applications. The TO-3PN-3 package provides a compact and reliable design. The 2SK2610 is RoHS compliant, ensuring its use in environmentally friendly products. Its high voltage and current ratings make it an excellent choice for power electronic circuits, motor control, and DC-DC converters. Additionally, its low resistance and fast switching times enable efficient energy transfer and reduced heat generation. Overall, the Toshiba 2SK2610 is a versatile and reliable power MOSFET transistor suitable for various applications in industrial, automotive, and consumer electronics.
Package
According to the product information, the package type of 2SK2610 is TO-3PN-3.
Pinout
According to the product information, the package type of the 2SK2610 is TO-3PN-3, which suggests a 3-pin component. The pin count of the 2SK2610 is 3 pins. As per the manufacturer's description, this is an N-channel power MOSFET with 5A current rating and 900V voltage rating. Its primary function is likely related to general-purpose power applications, such as switching or amplification.
Manufacturer
The manufacturer of the 2SK2610 is Toshiba, a Japanese multinational electronics company that specializes in producing electronic components, including semiconductors like MOSFETs.
Equivalent
Based on the product information, I found that the 2SK2610 is a Toshiba N-channel power MOSFET with a voltage rating of 900V and current rating of 5A. Equivalent products can be:
- STP16NF60 (STMicroelectronics)
- IRF840 (International Rectifier)
- FQP6N30C (Fairchild Semiconductor)
Please note that equivalent products may have slightly different specifications or packaging, but they serve similar purposes as the 2SK2610.
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 900 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 2.5 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 150 W |
Channel Mode | Enhancement | Series | 2SK2610 |
Configuration | Single | Fall Time | 60 ns |
Height | 20 mm | Length | 15.5 mm |
Product Type | MOSFET | Rise Time | 40 ns |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 8 ns |
Width | 4.5 mm | Unit Weight | 0.162260 oz |
Package/Case | TO-3PN-3 |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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