This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2SCR375PHZGT100Q +BOM

Compact power transistor for efficient energy management

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

2SCR375PHZGT100Q
Datasheet:

2SCR375PHZGT100Q Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

120 V
EDA/CAD Models:

Request Free CAD Models for 2SCR375PHZGT100Q

2SCR375PHZGT100Q Information

General Description

Bipolar Transistors - BJT NPN Middle Power Transistor (120V / 1.5A) 2SCR375PHZG is Low VCE(sat) transistor for Low Frequency Amplifier. It is a highly reliable product for automotive.

Key Features

Low saturation voltage V
AEC-Q101 Qualified

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	120 V	Collector- Base Voltage VCBO	120 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	100 mV
Maximum DC Collector Current	1.5 A	Pd - Power Dissipation	500 mW
Gain Bandwidth Product fT	200 MHz	Maximum Operating Temperature	+ 150 C
Continuous Collector Current	1.5 A	DC Collector/Base Gain hfe Min	120 at 0.2 A, 5 V
DC Current Gain hFE Max	390 at 0.2 A, 5 V	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si	Part # Aliases	2SCR375PHZG
Package/Case	SOT-89-3