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<p>The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.</p>
2N6388G
Active
The 2N6388G is an NPN Darlington transistor from ON Semiconductor, specifically designed for high-power applications. It features a high DC current gain of 2500 (typical) at an collector current of 4.0 Adc, with ratings up to 80V and 10A. This device has a compact TO-220AB package and benefits from built-in base-emitter shunt resistors for improved performance. The transistor exhibits low collector-emitter saturation voltage, making it suitable for applications where high power density and efficiency are required. The 2N6388G can be used in various applications such as audio amplifiers, motor drives, switching circuits, and more. Its reliability is ensured by a monolithic construction and meets ESD ratings for machine model C and human body model 3B. Additionally, Pb-free packaging options are available.
The 2N6388G transistor features:
The package type of 2N6388G is TO-220-3.
The 2N6388G transistor is available in a TO-220AB package, which has a standard 3-pin configuration. Pin 1 is the BASE (B) or input pin for applying control voltage. Pin 2 is the COLLECTOR (C) or output pin that provides current flow when the transistor is ON. Pin 3 is the EMMITTER (E) or output pin that is connected to the load and carries the majority of the overall output. In summary, the 2N6388G has a 3-pin configuration with Pin 1 as Base, Pin 2 as Collector, and Pin 3 asEmitter.
The manufacturer of the 2N6388G transistor is ON Semiconductor (ONsemi).
The 2N6388G transistor, being a high-current gain Darlington bipolar transistor, is suitable for applications that require high current gains and high voltages, such as:
These applications require high DC current gain and low saturation voltage, which the 2N6388G provides.
Based on the data sheet, it appears that there isn't an explicit statement indicating equivalent products for the 2N6388G. However, given its specifications (e.g., Darlington structure, high current gain, and voltage and current ratings), alternative NPN transistors with similar characteristics could be used as substitutes. Some examples might include ON Semiconductor's própwn 2N7000 series or equivalent devices from other manufacturers, such as STMicroelectronics' BRD104 or Texas Instruments' ZTX630.
Status | Active | Case Outline | 221A-09 |
---|---|---|---|
MSL Temp (°C) | 0 | Container Type | TUBE |
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 80 V |
Emitter- Base Voltage VEBO | 5 V | Maximum DC Collector Current | 10 A |
Pd - Power Dissipation | 65 W | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 10 A |
DC Collector/Base Gain hfe Min | 1000 | DC Current Gain hFE Max | 20000 |
Height | 15.75 mm | Length | 10.53 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Width | 4.83 mm |
Unit Weight | 0.211644 oz | Package/Case | TO-220 |
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02/04/2023
It went a short time, but it came. Thrown in the mailbox
12/06/2022
Super came quick thanks recommend
04/02/2022
Arrived in time. Is as described. It works. Thank you.
01/06/2022
Perfect was was super fast received the product in a few days and all came as expected!
Preliminary Specification 2N6388G PDF
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