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2N5415 +BOM

200V 1W 30@50mA,10V 1A PNP TO-39 Bipolar Transistors - BJT ROHS

2N5415 General Description

Bipolar (BJT) Transistor PNP 200 V 1 A 15MHz 1 W Through Hole TO-39

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 200 V Collector- Base Voltage VCBO 200 V
Emitter- Base Voltage VEBO 4 V Collector-Emitter Saturation Voltage 2.5 V
Maximum DC Collector Current 1 A Pd - Power Dissipation 1 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Continuous Collector Current 1 A DC Collector/Base Gain hfe Min 15
DC Current Gain hFE Max 120 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 0.014110 oz

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In Stock: 4,457

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.299 $2.30
200+ $0.919 $183.80
500+ $0.887 $443.50
1000+ $0.872 $872.00

The prices below are for reference only.