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See Technical Specifications

2N3904G +BOM

Compact and reliable general-purpose transisto

Manufacturer:

onsemi
Mfr.Part #:

2N3904G
Datasheet:

2N3904G Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

40 V
EDA/CAD Models:

Request Free CAD Models for 2N3904G

2N3904G Information

Description

The 2N3904G is a small signal bipolar transistor from ON Semiconductor, packaged in a TO-92 or TO-226-3 long body package. It's an NPN type transistor with a maximum current gain of 0.2A, a breakdown voltage of 40V, and a maximum power dissipation of 1W. This transistor is suitable for general-purpose amplification, switching, and detection applications. Its small size and low power consumption make it ideal for use in portable devices, consumer electronics, and industrial control systems. The 2N3904G is also RoHS compliant and has lead-free packages available, making it a reliable choice for modern designs that require environmentally friendly components.

Package

According to the product information, the 2N3904G transistor comes in two package types: TO-226-3 and TO-92-3 Long Body.

Pinout

The 2N3904G is a small signal NPN transistor with a TO-92 package. It has three pins:

Base (B): Input pin for controlling the transistor's operation
Collector (C): Output pin that connects to the load or next stage in a circuit
Emitter (E): Output pin that provides the output current

The 2N3904G is commonly used as an amplifier, switch, or voltage regulator in electronic circuits.

Manufacturer

The manufacturer of the 2N3904G is ON Semiconductor, a leading global semiconductor company that designs, manufactures, and supplies power management, analog, sensors, interface, logic, timing, and connectivity solutions for various industries.

Equivalent

The equivalent products of 2N3904G are:

BC548
BC549
KBC148
KBC149

These transistors have similar characteristics, such as a small signal NPN transistor with a maximum current gain of around 100-200, and are often used in general-purpose amplification applications.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	200 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	200 mA
DC Collector/Base Gain hfe Min	60	Height	5.33 mm
Length	5.2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Width	4.19 mm
Package/Case	TO-92