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2N3637UB/TR +BOM

Bipolar Transistors - BJT BJTs

2N3637UB/TR Information

General Description

Bipolar (BJT) Transistor PNP 175 V 1 A 1.5 W Surface Mount UB

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 175 V Collector- Base Voltage VCBO 175 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 1.5 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 55 at 100 uA, 10 V DC Current Gain hFE Max 300 at - 50 mA, - 10 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 100
Subcategory Transistors Technology Si
Package/Case LCC-3

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