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2N2907ACSM +BOM

Product 2N2907ACSM Synopsis: Dual-NPN configuration transistors optimized for reliable bipolar junction operation

Key Features

  • SILICON PLANAR EPITAXIAL PNP TRANSISTOR
  • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)
  • CECC SCREENING OPTIONS
  • SPACE QUALITY LEVELS OPTIONS
  • HIGH SPEED SATURATED SWITCHING

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1.6 V
Pd - Power Dissipation 400 mW Gain Bandwidth Product fT 200 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Continuous Collector Current 600 mA DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V
DC Current Gain hFE Max 300 at 150 mA, 10 V Product Type BJTs - Bipolar Transistors
Subcategory Transistors Technology Si

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