This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2N2609 +BOM

Powerful electronic component for demanding application

Manufacturer:

Microchip
Mfr.Part #:

2N2609
Datasheet:

2N2609 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

P-Channel
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for 2N2609

2N2609 Information

Description

The 2N2609 is a P-channel JFET (Junction Field-Effect Transistor) from Solitron Devices Inc. It's packaged in a TO-18 (TO-206AA) through-hole format. This device operates at a maximum voltage of 30V, with a current rating of 10mA and a power dissipation of 300mW. The 2N2609 is designed for general-purpose applications where a low input impedance and high output impedance are required. In summary, the 2N2609 is a P-channel JFET transistor suitable for various electronic circuits that demand a specific set of characteristics, such as amplification, switching, or level shifting.

Features

Based on the provided information, the 2N2609 JFET P-Channel has the following features:

P-channel type
Operating voltage up to 30V
Maximum current of 10mA
Power dissipation of 300mW
Through-hole package with a TO-18 (TO-206AA) footprint

Please note that this information is based on the provided data and may not include all possible features or specifications.

Package

According to the product information, the package type of 2N2609 is TO-18 (TO-206AA), a through-hole type.

Manufacturer

The manufacturer of the 2N2609 is Solitron Devices Inc, which is a semiconductor component manufacturer.

Equivalent

The equivalent products of 2N2609 are:

NTE510
Fairchild FET-30P
Motorola MPF102
RCA CA31040A

Please note that these equivalents may have slightly different specifications or packaging, but they serve the same functional purpose as the 2N2609.

Specifications

Product Category	JFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	P-Channel
Configuration	Single	Vgs - Gate-Source Breakdown Voltage	30 V
Gate-Source Cutoff Voltage	6 V	Drain-Source Current at Vgs=0	- 10 mA
Pd - Power Dissipation	300 mW	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 200 C	Product Type	JFETs
Factory Pack Quantity	1	Subcategory	Transistors
Package/Case	TO-18-3