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2N2605UB +BOM

High-quality power transistor for your electronics project

2N2605UB Information

General Description

Bipolar (BJT) Transistor PNP 60 V 30 mA 400 mW Surface Mount UB

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 70 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 300 mV
Pd - Power Dissipation 400 mW Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Continuous Collector Current 30 mA
DC Collector/Base Gain hfe Min 150 DC Current Gain hFE Max 450
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Package/Case TO-46-3

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