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2N2218 +BOM

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2N2218 Information

Description

The 2N2218 is a bipolar junction transistor (BJT) from Microchip Technology. It is packaged in a TO-39-3 package, which allows for reliable operation in various electronic applications. As a NPN-type BJT, the 2N2218 has an emitter-base voltage of around 6V and a collector-emitter current gain characteristic with varying base currents. The maximum ratings include a voltage of up to 30V and a current of up to 200mA for both the input and output stages. In practical terms, the 2N2218 is suitable for a wide range of applications such as amplifiers, switches, linear regulators, and other circuit applications where low power and high-speed switching are required.

Package

The package type of 2N2218 is TO-39-3.

Pinout

The 2N2218 is a NPN bipolar junction transistor (BJT) with a TO-39-3 package.

Pin Count: The 2N2218 has 3 pins:

  • Base: Pin 1
  • Collector: Pin 2
  • Emitter: Pin 3

Function: It's an amplification and switching element. The base is used to control current flow between the collector and emitter, making it suitable for use as a common-base amplifier.

Please note that this information is based on the provided data and might not cover all aspects of the product.

Manufacturer

The manufacturer of the 2N2218 is Philips Semiconductors, not Microchip Technology. Philips Semiconductors is a well-known semiconductor company that specializes in designing, manufacturing, and marketing a wide range of semiconductor products, including bipolar transistors like the 2N2218.

Equivalent

The 2N2218 is a NPN bipolar junction transistor (BJT). Equivalent products include:

  • BC547
  • 2N3904
  • KBC181
  • MMBT2222A

These transistors have similar characteristics, such as voltage and current ratings, making them suitable substitutes in many applications.

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Case Connection COLLECTOR Collector Current-Max (IC) 0.8 A
Collector-Emitter Voltage-Max 30 V Configuration SINGLE
DC Current Gain-Min (hFE) 20 JEDEC-95 Code TO-205AD
JESD-30 Code O-MBCY-W3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 200 °C Polarity/Channel Type NPN
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form WIRE
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz
Turn-off Time-Max (toff) 250 ns Turn-on Time-Max (ton) 40 ns
Package/Case TO-39-3

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