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2N1480 PBFREE +BOM

Wide input voltage range and high current output capabilitie

2N1480 PBFREE Information

General Description

Bipolar (BJT) Transistor NPN 55 V 1.5 A 1.5MHz 5 W Through Hole TO-39

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 55 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 1.4 V
Maximum DC Collector Current - Pd - Power Dissipation 5 W
Gain Bandwidth Product fT 1.5 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Series 2N1480
Continuous Collector Current 1.5 A DC Collector/Base Gain hfe Min 20 at 200 mA, 4 V
DC Current Gain hFE Max 60 at 200 mA, 4 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 500 Subcategory Transistors
Technology Si Package/Case TO-39

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