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650 V high-side and low-side gate driver with integrated bootstrap diode

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2ED21064S06JXUMA1 General Description

650 V high and low sidehigh speed power MOSFETand IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2106S06F. Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Infineon Technologies Corporation Inventory

Key Features

  • Operating voltages (VS node) upto + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
  • Floating channel designed for bootstrap operation
  • High and low voltage pins separated for maximum creepage and clearance
  • Separate logic and power ground, shorten the gate loop
  • Independent under voltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • HIN, LIN logic input
  • Maximum supply voltage of 25 V
  • Logic operational up to –11 V on VS Pin
  • Negative voltage tolerance on inputs of –5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
  • Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
Infineon Technologies Corporation Original Stock


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RHoS yes PBFree yes
HalogenFree yes


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2ED21064S06JXUMA1 Datasheet PDF

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Buying Guide

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